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Showing 1 - 6 of 6 matches in All Departments
The self-assembled nanostructured materials described in this book
offer a number of advantages over conventional material
technologies in a wide range of sectors. World leaders in the field
of self-organisation of nanostructures review the current status of
research and development in the field, and give an account of the
formation, properties, and self-organisation of semiconductor
nanostructures. Chapters on structural, electronic and optical
properties, and devices based on self-organised nanostructures are
also included.
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.
Quantum Materials, Devices, and Applications covers the advances made in quantum technologies, both in research and mass production for applications in electronics, photonics, sensing, biomedical, environmental and agricultural applications. The book includes new materials, new device structures that are commercially available, and many more at the advanced research stage. It reviews the most relevant, current and emerging materials and device structures, organized by key applications and covers existing devices, technologies and future possibilities within a common framework of high-performance quantum devices. This book will be ideal for researchers and practitioners in academia, industry and those in materials science and engineering, electrical engineering and physics disciplines.
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a how to on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in
terms of unique authors, papers and conferences) from a pure
research domain into commercial applications (prototype device
structures and more at the advanced research stage). MBE is
important because it enables new device phenomena and facilitates
the production of multiple layered structures with extremely fine
dimensional and compositional control. The techniques can be
deployed wherever precise thin-film devices with enhanced and
unique properties for computing, optics or photonics are required.
This book covers the advances made by MBE both in research and mass
production of electronic and optoelectronic devices. It includes
new semiconductor materials, new device structures which are
commercially available, and many more which are at the advanced
research stage.
Tremendous progress has been made in the last few years in the
growth, doping and processing technologies of the wide bandgap
semiconductors. As a result, this class of materials now holds
significant promis for semiconductor electronics in a broad range
of applications.
* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 um and 1.55 um are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. "Dilute Nitrides (III-N-V) Semiconductors: Physics and
Technology" organises the most current available data, providing a
ready source of information on a wide range of topics, making this
book essential reading for all post graduate students, researchers
and practitioners in the fields of Semiconductors and
Optoelectronics
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